PECVD and Thermal Gate Oxides on 3C vs. 4H SiC: Impact on Leakage, Traps and Energy Offsets
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Levinshtein M. Rumyantsev S. Shur M. , Properties of Advanced Semiconductor Materials, John Wiley & Sons, UK (2001).
2. Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface
3. Theory and applications of internal photoemission in the MOS system at low electric fields
4. Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
5. Reliability of SiC MOS devices
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Exploring the border traps near the valence band in the SiO2 - SiC system using above-band-gap optical excitation;Physical Review Applied;2024-06-27
2. Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD;Solid-State Electronics;2019-03
3. Future technology trends;Wide Bandgap Power Semiconductor Packaging;2018
4. The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS;Applied Surface Science;2018-01
5. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni 2 Si formation and the resulting barrier height changes;Applied Surface Science;2017-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3