On the Anisotropically Etched Bonding Interface of Directly Bonded (100) Silicon Wafer Pairs-Reference-Cited by-同舟云学术

On the Anisotropically Etched Bonding Interface of Directly Bonded (100) Silicon Wafer Pairs

Published:1995-02-01 Issue:2 Volume:142 Page:547-553
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Ju B. K.¹²,Lee Y. H.¹²,Tchah K. H.²,Oh M. H.¹²

Affiliation:

1. Division of Electronics and Information Technology, Korea Institute of Science and Technology, 39‐1 Haweolgog‐dong, Seongbuk‐gu, Seoul 136‐791, Korea

2. Department of Electronic Engineering, Korea University, Anam‐dong, Seongbuk‐gu, Seoul 136‐701, Korea

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2044096/pdf

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