Stability of Excess Oxygen Atoms near Oxide Precipitate and Oxygen Solubility in Silicon Crystal
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
2. Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing
3. Wafer Strength and Slip Generation Behavior in 300 mm Wafers
4. Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon
5. SiOxprecipitate composition in Si, revisited: Discussion closed?
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3. Density Functional Theory Study on Anisotropic Arrangement of Interstitial Oxygen Atoms at (001) Interface of Oxide Precipitates in Si Crystal;ECS Journal of Solid State Science and Technology;2021-12-01
4. Prediction of O Aggregation in Straight Line at High Temperature in Si Crystals: Thermal Donors Attaching to an Oxide Precipitate Surface;ECS Journal of Solid State Science and Technology;2020-05-29
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