Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. Gettering of surface and bulk impurities in Czochralski silicon wafers
3. The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer
4. Relaxor Behaviors in Ferroelectric-Antiferroelectric Mixed Crystals
5. Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
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