Abstract
We have extensively reviewed metallic contamination control including the analysis, prevention, removal, and gettering in advanced ULSI manufacturing. Detection and removal of metallic contamination on the III-V surfaces used for high mobility channels in logic devices will be big challenges. Better understanding the behavior and the electric activities of metal impurities diffusing and the gettering design based on the physical properties of metals is required for controlling yield of memory devices, image sensors and high voltage MOS transistors.
Publisher
The Electrochemical Society
Cited by
5 articles.
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