1. Engineering of nitrogen profile in an ultrathin gate insulator to improve transistor performance and NBTI
2. J. Yugami, S. Tsujikawa, R. Tsuchiya, S. Saito, Y. Shimamoto, K. Torii, T. Mine, and T. Onai , inInternational Workshop on Gate Insulator (IWGI) Digest, p. 140 (2003).
3. N. Yasutake, K. Ohuchi, M. Fujiwara, K. Adachi, A. Hokazono, K. Kojima, N. Aoki, H. Suto, T. Watanabe, T. Morooka, H. Mizuno, S. Magoshi, T. Shimizu, S. Mori, H. Oguma, T. Sasaki, M. Ohmura, K. Miyano, H. Yamada, H. Tomita, D. Matsushita, K. Muraoka, S. Inaba, M. Takayanagi, K. Ishimaru, and H. Ishiuchi , inVLSI Technology Digest, p. 84 (2004).
4. <tex>$hbox Al_2hbox O_3$</tex>–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates