Engineering of nitrogen profile in an ultrathin gate insulator to improve transistor performance and NBTI-Reference-Cited by-同舟云学术

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Engineering of nitrogen profile in an ultrathin gate insulator to improve transistor performance and NBTI

Published:2003-03 Issue:3 Volume:24 Page:150-152
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sasaki T.,Kuwazawa K.,Tanaka K.,Kato J.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27076/01202510.pdf?arnumber=1202510

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3. Chip Reliability;Silicon Analog Components;2019-08-08

4. Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs;Fundamentals of Bias Temperature Instability in MOS Transistors;2015-08-06

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