<tex>$hbox Al_2hbox O_3$</tex>–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates-Reference-Cited by-同舟云学术

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<tex>$hbox Al_2hbox O_3$</tex>–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates

Published:2004-03 Issue:3 Volume:25 Page:138-140
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Yu D.S.,Huang C.H.,Chin A.,Zhu C.,Li M.F.,Cho B.J.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/28415/01269902.pdf?arnumber=1269902

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