Predictable Simple Reaction Model for Poly-Silicon LPCVD Process

Abstract

Poly-silicon deposition rate profiles on silicon wafers in several temperatures around 873 K along axial direction in commercial low-pressure chemical vapor deposition (LPCVD) reactor were investigated by both experiments and numerical simulations considering coupled computational fluid dynamics (CFD) and chemical reactions. While the chemical reaction processes of poly-silicon film deposition is a complicated system with a huge number of elementary reactions, we could successfully simulate the experimental results with a simplified 2-step surface reaction model of SiH4. Simulated film deposition rate profiles along the axial direction of reactor were in good agreement with experimental results, and the 2-step reaction model was proved to be a good tool for the numerical simulation of poly-silicon deposition process in commercial reactor.