Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient-Reference-Cited by-同舟云学术

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Published:1999-07-01 Issue:7 Volume:146 Page:2670-2678
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lerch W.¹,Glück M.¹,Stolwijk N. A.²,Walk H.¹³,Schäffer M.³,Marcus S. D.⁴,Downey D. F.³,Chow J. W.⁵

Affiliation:

1. STEAG AST Elektronik GmbH, Dornstadt, Germany

2. Institut für Metallforschung, Westfälische Wilhelms‐Universitat Münster, Germany

3. CADwalk, Allmendingen, Germany

4. STEAG AST Elektronik, Tempe, Arizona, United States of America

5. Varian Ion Implant Systems, Gloucester, Massachusetts, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391990/pdf

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