Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealing

Abstract

AbstractLow leakage diodes are necessary in order to manufacture high-quality variable capacitance diodes (varicaps), which are used in voltage-controlled oscillators. Junction leakage current affects the single sideband noise of the oscillator by up-conversion of 1/f and shot noise (Chan et al. in IEEE Trans Electron Devices 54(9):2570–2573, 2007, https://doi.org/10.1109/TED.2007.903201). Several sources show higher leakage current for RTP compared to furnace anneal (Lunnon et al. in J Electrochem Soc 132(10):2473, 1985, https://doi.org/10.1149/1.2113602, Gramenova et al. in J Electrochem Soc 146(1):359, 1999, https://doi.org/10.1149/1.1391613, Mikoshiba et al. in Jpn J Appl Phys, 1986, https://doi.org/10.1143/jjap.25.l631). In our experiments, we found lower leakage currents for RTP compared to furnace annealing. We present results from annealing experiments where we compare three annealing conditions with and without oxidizing annealing conditions. Graphical abstract