Advanced Direct-Polishing Process Development of Non-Porous Ultralow-kDielectric Fluorocarbon with Plasma Treatment on Cu Interconnects-Reference-Cited by-同舟云学术

Advanced Direct-Polishing Process Development of Non-Porous Ultralow-kDielectric Fluorocarbon with Plasma Treatment on Cu Interconnects

Published:2012 Issue:4 Volume:159 Page:H407-H411
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Gu Xun,Nemoto Takenao,Tomita Yugo,Teramoto Akinobu,Kuroda Rihito,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Ueki M. Tagami M. Ito F. Onodera T. Kume I. Furutake N. Yamamoto H. Kawahara J. Inoue N. Hijioka K. Takeuchi T. Saito S. Okada N. Hayashi Y. , in Technical Digest of International Electron Device Meeting, San Francisco, p. 619 (2008).

2. Mechanism of porous low-k film damage induced by plasma etching radicals

3. Effects of H[sub 2] plasma treatment on low dielectric constant methylsilsesquioxane

4. Etching mechanisms of low-k SiOCH and selectivity to SiCH and SiO[sub 2] in fluorocarbon based plasmas

5. Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials

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