Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects-Reference-Cited by-同舟云学术

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Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-$k$ Dielectric Fluorocarbon on Advanced Cu Interconnects

Published:2012-05-21 Issue: Volume:51 Page:05EC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gu Xun,Tomita Yugo,Nemoto Takenao,Miyatani Kotaro,Saito Akane,Kobayashi Yasuo,Teramoto Akinobu,Kuroda Rihito,Kuroki Shin-Ichiro,Kawase Kazumasa,Nozawa Toshihisa,Matsuoka Takaaki,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Film deposition and UV curing process impact on ultralow-kdielectric for high performance Cu interconnects;Japanese Journal of Applied Physics;2017-06-20

2. Cu Single Damascene Integration of an Organic Nonporous Ultralow- $k$ Fluorocarbon Dielectric Deposited by Microwave-Excited Plasma-Enhanced CVD;IEEE Transactions on Electron Devices;2012-05

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