Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-kDielectric Fluorocarbon on Advanced Cu Interconnects-Reference-Cited by-同舟云学术

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Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-kDielectric Fluorocarbon on Advanced Cu Interconnects

Published:2012-05-01 Issue:5S Volume:51 Page:05EC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gu Xun,Tomita Yugo,Nemoto Takenao,Miyatani Kotaro,Saito Akane,Kobayashi Yasuo,Teramoto Akinobu,Kuroda Rihito,Kuroki Shin-Ichiro,Kawase Kazumasa,Nozawa Toshihisa,Matsuoka Takaaki,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference33 articles.

1. Dual damascene ash development for a VFTL of target k=2.0 integration

2. Properties of High-Performance Porous SiOC Low-kFilm Fabricated Using Electron-Beam Curing

3. Structural Studies of High-Performance Low-kDielectric Materials Improved by Electron-Beam Curing

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