Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing-Reference-Cited by-同舟云学术

Ulfrathin Tantalum Oxide Capacitor Process Using Oxygen‐Plasma Annealing

Published:1994-05-01 Issue:5 Volume:141 Page:1246-1251
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kamiyama Satoshi¹²³,Suzuki Hiroshi¹²³,Watanabe Hirohito¹²³,Sakai Akira¹²³,Kimura Hidekazu¹²³,Mizuki Jun'ichiro¹²³

Affiliation:

1. NEC Corporation, ULSI Device Development Laboratories, Sagamihara, Kanagawa 229, Japan

2. NEC Corporation, Micro‐electronics Research Laboratories, Tsukuba, Ibaraki 305, Japan

3. NEC Corporation, Fundamental Research Laboratories, Tsukuba, Ibaraki 305, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054904/pdf

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