Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal capacitor applications-Reference-Cited by-同舟云学术

Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal capacitor applications

Published:2013-09 Issue: Volume:542 Page:71-75
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Min-Kyu,Kim Woo-Hee,Lee Taeyoon,Kim Hyungjun

Funder

Future-Based Technology Development Program (Nano Fields)

National Research Foundation of Korea (NRF)

Ministry of Education, Science and Technology

Korean government (MEST)

Ministry of Knowledge Economy (MKE), Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics

2. Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

3. Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

4. Preparation and Functional Characterizations of Ta2O5 Deposits Organized at the Micro- and Nano-scale

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