Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO[sub 4] TFT Fabricated on Plastic Substrates-Reference-Cited by-同舟云学术

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Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO[sub 4] TFT Fabricated on Plastic Substrates

Published:2008 Issue:12 Volume:11 Page:H317
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Dong Hun,Cho Nam Gyu,Han Seung Ho,Kim Ho-Gi,Kim Il-Doo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

4. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

5. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

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