Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate-Reference-Cited by-同舟云学术

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Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Published:2016-03-22 Issue:4S Volume:55 Page:04EK06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cui Guodong,Han Dedong,Yu Wen,Shi Pan,Zhang Yi,Huang Lingling,Cong Yingying,Zhou Xiaoliang,Zhang Xiaomi,Zhang Shengdong,Zhang Xing,Wang Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EK06/pdf

Reference28 articles.

1. Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

2. Wearable Electronics: Woven Electronic Fibers with Sensing and Display Functions for Smart Textiles (Adv. Mater. 45/2010)

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

5. Photo-Leakage Current of Zinc Oxide Thin-Film Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors;Journal of the Society for Information Display;2019-11-21

2. Dual role of Ag nanowires in ZnO quantum dot/Ag nanowire hybrid channel photo thin film transistors;RSC Advances;2018

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