Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors-Reference-Cited by-同舟云学术

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

Published:2019-11-21 Issue:12 Volume:27 Page:769-775
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:J Soc Inf Display

Author:

Liu Xianzhe¹,Ning Honglong¹^ORCID,Zhang Xu¹,Deng Yuxi¹,Guo Dong²,Wang Yiping³,Wang Xiaofeng⁴,Yuan Weijian¹,Yao Rihui¹,Peng Junbiao¹

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of Technology Guangzhou China

2. School of Materials Science and EngineeringBeihang University Beijing China

3. State Key Laboratory of Mechanics and Control of Mechanical StructuresNanjing University of Aeronautics and Astronautics Nanjing China

4. Institute of SemiconductorsChinese Academy of Science Beijing China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jsid.849

Reference15 articles.

1. Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

2. Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

3. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

4. Overview of electroceramic materials for oxide semiconductor thin film transistors

5. An amorphous oxide semiconductor thin-film transistor route to oxide electronics

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