Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors-Reference-Cited by-同舟云学术

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Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Published:2017-05 Issue:3 Volume:35 Page:031510
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Jung Hanearl,Oh Il-Kwon,Yeo Seungmin,Kim Hyungjun,Lee Su Jeong,Kim Yun Cheol,Myoung Jae-Min,Kim Soo-Hyun,Lim Jun Hyung,Lee Sunhee

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4982224

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al₂O₃ with a Series of Al(CH₃)_xCl_3–x and Al(C_yH_2y+1)₃ Precursors;Journal of the American Chemical Society;2022-06-07

2. High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2Gate Dielectric;IEEE Transactions on Electron Devices;2019-08

3. Improvement in IGZO-based thin film transistor performance using a dual-channel structure and electron-beam-irradiation;Semiconductor Science and Technology;2019-01-22

4. Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films;ACS Applied Materials & Interfaces;2018-10-25

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