New Precursors for Copper ALD

Abstract

A series of new non-fluorinated volatile copper precursors are described which have been designed for ALD copper. These new molecules are low melting solids which show outstanding thermal stability and high chemical reactivity with molecular hydrogen to give pure copper films on ruthenium substrates in the temperature range of 130-200{degree sign}C. Using ruthenium (001) substrates results in strongly adherent ALD copper films which are preferentially oriented (111) for optimal electrical performance.