Opportunities for Plasma-Assisted Atomic Layer Deposition

Abstract

Within the method of atomic layer deposition (ALD), additional reactivity can be delivered to the surface in the form of plasma-produced species. The application of such a low- temperature plasma in the ALD cycle can therefore open up a processing parameter space that is unattainable by the strictly thermally driven process. In this contribution several possible benefits of plasma-assisted ALD will be reviewed showing bright prospect for plasma-assisted ALD for a large variety of applications, also far beyond the typical use in semiconductor devices.