Author:
Zyuzin S. S.,Ganykina E. A.,Rezvanov A. A.,Zasseev Ya. G.,Gvozdev V. A.,Gornev E. S.
Reference21 articles.
1. Belous, A., Solodukha, V., and Krasnikov, G., Osnovy proektirovaniya submikronnykh mikroskhem (Basics of Designing Submicron Chips), Moscow: Tekhnosfera, 2022.
2. Nigro, R.L., Schilirò, E., Mannino, G., Di Franco, S., and Roccaforte, F., Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers, J. Cryst. Growth, 2020, vol. 539, p. 125624. https://doi.org/10.1016/j.jcrysgro.2020.125624
3. Kessels, E., Heil, S., Langereis, E., Van Hemmen, H., Knoops, H., Keuning, W., and Van De Sanden, R., Opportunities for plasma-assisted atomic layer deposition, ECS Trans., 2007, vol. 3, no. 15, pp. 183–190. https://doi.org/10.1149/1.2721487
4. Chen, X., Feng, J., and Ma, H., The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation, 2015 15th Non-Volatile Memory Technology Symp. (NVMTS), Beijing, 2015, IEEE, 2015, pp. 1–5. https://doi.org/10.1109/nvmts.2015.7457427
5. Petrov, A., Alekseeva, L., Ivanov, A., Luchinin, V., Romanov, A., Chikyow, T., and Nabatame, T., On the way to a neuromorphic memristor computer platform, Nanoindustriya, 2016, no. 1, pp. 94–109. https://doi.org/10.22184/1993-8578.2016.63.1.94.109