The Temperature Dependence of the Etch Rates of GaAs , AlGaAs , InP , and Masking Materials in a Boron Trichloride:Chlorine Plasma-Reference-Cited by-同舟云学术

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The Temperature Dependence of the Etch Rates of GaAs , AlGaAs , InP , and Masking Materials in a Boron Trichloride:Chlorine Plasma

Published:1988-04-01 Issue:4 Volume:135 Page:929-936
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Contolini Robert J.¹

Affiliation:

1. Bell Communications Research, Red Bank, New Jersey 07701

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2095839/pdf

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Highly selective GaAs/AlGaAs dry etching using HBr/SF6/He;Journal of Vacuum Science & Technology B;2021-09

3. Polymers;Reference Module in Materials Science and Materials Engineering;2016

4. High rate dry etching of InGaZnO by BCl3/O2plasma;Applied Physics Letters;2011-08-08

5. Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power;Journal of the Korean Physical Society;2007-04-14

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