High rate dry etching of InGaZnO by BCl3/O2plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624594
Reference17 articles.
1. Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates
2. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
4. Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor
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1. Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas;Journal of Vacuum Science & Technology A;2023-08-22
2. High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE;ACS Applied Materials & Interfaces;2022-07-19
3. Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma;Coatings;2021-07-29
4. Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma;Korean Journal of Chemical Engineering;2018-04-02
5. Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-05
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