Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices-Reference-Cited by-同舟云学术

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Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices

Published:2010 Issue:5 Volume:157 Page:H497
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lu Chih-Cheng,Huang Jiun-Jia,Luo Wun-Cheng,Hou Tuo-Hung,Lei Tan-Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. D. K. Schroder ,Semiconductor Material and Device Characterization, 3rd ed., p. 225, John Wiley & Sons, New York (1998).

2. L. S. Adam, C. Chiu, M. Huang, X. Wang, Y. Wang, S. Singh, Y. Chen, H. Bu, and J. Wu , inInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2005, IEEE, pp. 139–142 (2005).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths;Thin Solid Films;2013-10

2. Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT;Journal of The Electrochemical Society;2010

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