Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT-Reference-Cited by-同舟云学术

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Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT

Published:2010 Issue:7 Volume:157 Page:H705
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lu Chih-Cheng,Huang Jiun-Jia,Luo Wun-Cheng,Hou Tuo-Hung,Lei Tan-Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Y. Taur and T. H. Ning ,Fundamentals of Modern VLSI Devices, Chap. 4, Cambridge University Press, New York (1998).

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Uniaxial-process-induced strained-Si: extending the CMOS roadmap

4. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

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