Status Review of Nanocrystals Embedded High-K Nonvolatile Memories

Abstract

Nonvolatile memories including high-k dielectric materials are important for future ULSICs. Among several possible structures, the nanocrystals embedded high-k gate dielectric is popular because of the simple fabrication process, versatility in selecting composing materials, good device characteristics and reliability. In this paper, critical issues on the nanocrystals embedded ZrHfO high-k MOS memory capacitors are reviewed and discussed.