Influence of the Al2O3partial-monolayer number on the crystallization mechanism of TiO2in ALD TiO2/Al2O3nanolaminates and its impact on the material properties-Reference-Cited by-同舟云学术

Influence of the Al2O3partial-monolayer number on the crystallization mechanism of TiO2in ALD TiO2/Al2O3nanolaminates and its impact on the material properties

Published:2016-08-18 Issue:37 Volume:49 Page:375301
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Testoni G E,Chiappim W,Pessoa R S,Fraga M A,Miyakawa W,Sakane K K,Galvão N K A M,Vieira L,Maciel H S

Funder

Coordenao de Aperfeioamento de Pessoal de Nvel Superior

Conselho Nacional de Desenvolvimento Cientfico e Tecnolgico

Fundao de Amparo Pesquisa do Estado de So Paulo

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=37/a=375301/pdf

Reference47 articles.

1. A review on hybrid nanolaminate materials synthesized by deposition techniques for energy storage applications

2. ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements

3. Study on Structural, Mechanical, and Optical Properties of Al2O3–TiO2 Nanolaminates Prepared by Atomic Layer Deposition

4. Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3

5. Impact of the interfaces in the charge trap layer on the storage characteristics of ZrO2/Al2O3 nanolaminate-based charge trap flash memory cells

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