A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling-Reference-Cited by-同舟云学术

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A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling

Published:2014 Issue:14 Volume:6 Page:7799
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lee Byung-Hyun,Moon Dong-Il,Jang HyunJae,Kim Chang-Hoon,Seol Myeong-Lok,Choi Ji-Min,Lee Dong-Il,Kim Min-Wu,Yoon Jun-Bo,Choi Yang-Kyu

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR06251A

Reference41 articles.

1. Dynamic sleep transistor and body bias for active leakage power control of microprocessors

2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

3. The electronic structure at the atomic scale of ultrathin gate oxides

4. Limits on Silicon Nanoelectronics for Terascale Integration

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