Author:
Lu Jun,Luo Jun,Zhang Shi-Li,Östling Mikael,Hultman Lars
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference13 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. C. Lavoie, F. M. d’Heurle, and S. -L. Zhang , in
Handbook of Semiconductor Manufacturing Technology
, Chap. 10, 2nd ed., Y. Nishi and R. Doering , Editors, Taylor & Francis and CRC Press, Boca Raton, FL (2007).
3. Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films
4. Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate
5. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
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12 articles.
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