Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate-Reference-Cited by-同舟云学术

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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Published:2010-02-15 Issue:7 Volume:96 Page:071915
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Zhen,Zhang Shi-Li,Yang Bin,Zhu Yu,Rossnagel Stephen M.,Gaudet Simon,Kellock Andrew J.,Jordan-Sweet Jean,Lavoie Christian

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3323097

Reference12 articles.

1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends

2. Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi

3. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition

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