Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution-Reference-Cited by-同舟云学术

Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution

Published:2010 Issue:10 Volume:13 Page:H350
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Ferng Y. C.,Chang L. B.,Das A.,Chen C. Y.,Lin C. C.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference17 articles.

1. AlGaN/GaN varactor diode for integration in HEMT circuits

2. M. Marso, J. Bernát, M. Wolter, P. Javorka, A. Fox, and P. Kordoš , in Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems , IEEE Electron Devices Society, p. 295 (2002).

3. High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

4. High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

5. Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

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