Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor-Reference-Cited by-同舟云学术

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Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor

Published:2012-11-26 Issue: Volume:51 Page:124201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ferng Yi-Cherng,Chang Liann-Be,Das Atanu,Lin Ching-Chi,Cheng Chun-Yu,Kuei Ping-Yu,Chow Lee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN 2DEG Varactor-Based Impulse Suppression Module for Protection Against Malicious Electromagnetic Interference;Journal of Electronic Materials;2020-04-10

2. Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application;Crystals;2020-04-10

3. Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films;Journal of Electrical Engineering and Technology;2015-07-01

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