AlGaN/GaN varactor diode for integration in HEMT circuits
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20011007?crawler=true&mimetype=application/pdf
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1. Selective InAlAs/InGaAs MBE growth for high frequency OEIC applications
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3. Electrical behaviour of the based MSM-2DEG diode
4. Theory of junction between two-dimensional electron gas and p-type semiconductor
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1. Capacitance Characteristics and Breakdown Mechanism of AlGaN/GaN Metal–Semiconductor–Metal Varactors and their Anti-Surge Application;Crystals;2020-04-10
2. High-${Q}$ GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study;IEEE Transactions on Electron Devices;2019-10
3. Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas;Microelectronics Reliability;2017-11
4. Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities;Journal of Applied Physics;2017-04-07
5. Improved surge protection of flip-chip gallium nitride-based HEMTs by metal-semiconductor-metal two-dimensional electron gas varactor;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03
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