Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate-Reference-Cited by-同舟云学术

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Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate

Published:2015 Issue:5 Volume:4 Page:P119-P123
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liu Qingbo,Wang Guilei,Duan Ningyuan,Radamson Henry,Liu Hong,Zhao Chao,Luo Jun

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

2. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

3. Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs

4. Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator

5. Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

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1. Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design;Micromachines;2022-08-04

2. Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors;Journal of Materials Science: Materials in Electronics;2021-08-28

3. Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art;Frontiers in Materials;2021-03-26

4. Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation;Journal of Applied Physics;2021-03-21

5. Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness;ECS Journal of Solid State Science and Technology;2020-06-15

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