Effect of β-cyclodextrin and Citric Acid on Chemical Mechanical Polishing of Polycrystalline Ge2Sb2Te5in H2O2Containing Slurry

Author:

Cho Jong-Young,Hwang Hee-Sub,Woo Sang-Hwa,Park Jin-Hyung,Hwang Eung-Rim,Kang Sung-Goon,Park Jea-Gun

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference23 articles.

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3. Zhang K. L. Liu Q. B. Song Z. T. Feng S. L. Chen B. , in Proceedings of 8th International Conference on Solid-State and Integrated Circuit Technology, p. 821 (2006).

4. Effect of Alkaline Agent on Polishing Rate of Nitrogen-Doped Ge[sub 2]Sb[sub 2]Te[sub 5] Film in Chemical Mechanical Polishing

5. Effect of abrasive material properties on polishing rate selectivity of nitrogen-doped Ge2Sb2Te5to SiO2film in chemical mechanical polishing

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