Porous SiGe Nanostructures Formed by Electrochemical Etching of Thin Poly-SiGe Films-Reference-Cited by-同舟云学术

Porous SiGe Nanostructures Formed by Electrochemical Etching of Thin Poly-SiGe Films

Published:2004 Issue:5 Volume:151 Page:C326
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Del Caño T.,Sanz L. F.,Martı́n P.,Avella M.,Jiménez J.,Rodrı́guez A.,Sangrador J.,Rodrı́guez T.,Torres-Costa V.,Martı́n-Palma R. J.,Martı́nez-Duart J. M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Luminescence of porous multicrystalline Si1−xGex alloys

2. Visible photoluminescence of porous Si1−xGexobtained by stain etching

3. Defects and visible photoluminescence in porous Si1−Ge

4. Photoluminescence and Raman study of porous SiGe

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