Effect of rapid thermal annealing on crystallization and stress relaxation of SiGe nanoparticles deposited by ICP PECVD
Author:
Affiliation:
1. Department of Mechanical and Materials Engineering
2. Masdar Institute of Science and Technology
3. Abu Dhabi
4. United Arab Emirates
Abstract
This work demonstrates the viability of direct fabrication utilizing a single (deposition/anneal) process for polycrystalline silicon germanium sub-micro particles.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA04426G
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4. High-performance a-SiGe:H thin film prepared by plasma-enhanced chemical vapor deposition with high plasma power for solar-cell application
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