Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering-Reference-Cited by-同舟云学术

Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

Published:1983-03-01 Issue:3 Volume:130 Page:638-644
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Bouchier D.¹²,Gautherin G.¹²,Schwebel C.¹²,Bosseboeuf A.¹²,Agius B.¹²,Rigo S.¹²

Affiliation:

1. Institut d'Electronique Fondamentale, Bâtiment 220, Université Paris XI , 91405 Orsay‐Cédex, France

2. Groupe de Physique des Solides, E.N.S.‐Université Paris VII , Tour 23, 2 Place Jussieu, 75221 Paris‐Cédex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2119772/pdf

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