A W-Band Power Amplifier Design for Radar Transmitter Using 28-nm CMOS Process-Reference-Cited by-同舟云学术

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A W-Band Power Amplifier Design for Radar Transmitter Using 28-nm CMOS Process

Published:2022-11 Issue:11 Volume:33 Page:849-854
ISSN:1226-3133
Container-title:The Journal of Korean Institute of Electromagnetic Engineering and Science
language:en
Short-container-title:J. Korean Inst. Electromagn. Eng. Sci.

Author:

Park Se-Jun^ORCID,Kang Seuk-Won^ORCID,Choi Kyu-Jin^ORCID,Kim Byung-Sung^ORCID

Funder

Samsung Electronics Co., Ltd

National Research Foundation of Korea

Publisher

Korean Institute of Electromagnetic Engineering and Science

Subject

General Medicine

Link

http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2022.33.11.849

Reference9 articles.

1. C. Nocera, G. Papotto, A. Cavarra, E. Ragonese, and G. Palmisano, “A 13.5-dBm 1-V power amplifier for W-band automotive radar applications in 28-nm FD-SOI CMOS technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 3, pp. 1654-1660, Mar. 2021.10.1109/TMTT.2020.3048934

2. Y. Kim, Y. Kwon, “Analysis and design of millimeter-wave power amplifier using stacked-FET structure,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 2, pp. 691-702, Feb. 2015. 10.1109/TMTT.2014.2387846

3. H. S. Son, C. J. Lee, D. M. Kang, T. H. Jang, H. S. Lee, and S. H. Kim, et al., “A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P1dB in 65-nm CMOS technology,” in 2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Anaheim, Jan. 2018, pp. 35-38. 10.1109/PAWR.2018.8310061

4. J. R. Long, “Monolithic transformers for silicon RF IC design,” IEEE Journal of Solid-State Circuits, vol. 35, no. 9, pp. 1368-1382, Sep. 2000. 10.1109/4.868049

5. A. Agah, J. A. Jayamon, P. M. Asbeck, L. E. Larson, and J. F. Buckwalter, “Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS,” IEEE Journal of Solid-State Circuits, vol. 49, no. 5, pp. 1148-1157, May 2014. 10.1109/JSSC.2014.2308292

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1. Ka-Band Power Amplifier Design for Radar Transmitter Using 40-nm CMOS Process;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04

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