Ka-Band Power Amplifier Design for Radar Transmitter Using 40-nm CMOS Process
Author:
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2024.35.4.347
Reference9 articles.
1. S. J. Park, S. W. Kang, K. J. Choi, and B. S. Kim, "A W-band power amplifier design for radar transmitter using 28-nm CMOS process," The Journal of Korean Institute of Electromagnetic Engineering and Science, vol. 33, no. 11, pp. 849-854, Nov. 2022. 10.5515/KJKIEES.2022.33.11.849
2. J. R. Long, "Monolithic transformers for silicon RF IC design," IEEE Journal of Solid-State Circuits, vol. 35, no. 9, pp. 1368-1382, Sep. 2000. 10.1109/4.868049
3. H. T. Dabag, B. Hanafi, F. Golcuk, A. Agah, J. F. Buckwalter, and P. M. Asbeck, "Analysis and design of stacked-FET millimeter-wave power amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 4, pp. 1543-1556, Mar. 2013. 10.1109/TMTT.2013.2247698
4. B. Park, S. Jin, D. Jeong, J. Kim, Y. Cho, and K. Moon, et al., "Highly linear mm-wave CMOS power amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 12, pp. 4535-4544, Nov. 2016. 10.1109/TMTT.2016.2623706
5. M. Vigilante, P. Reynaert, "A wideband class-AB power amplifier with 29～57-GHz AM-PM compensation in 0.9-V 28-nm bulk CMOS," IEEE Journal of Solid-State Circuits, vol. 53, no. 5, pp. 1288-1301, May 2018. 10.1109/JSSC.2017.2778275
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