Channel Protection Layer Effect on the Performance of Oxide TFTs-Reference-Cited by-同舟云学术

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Channel Protection Layer Effect on the Performance of Oxide TFTs

Published:2009-12-04 Issue:6 Volume:31 Page:653-659
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Park Sang-Hee Ko,Cho Doo-Hee,Hwang Chi-Sun,Yang Shinhyuk,Ryu Min Ki,Byun Chun-Won,Yoon Sung Min,Cheong Woo-Seok,Cho Kyoung Ik,Jeon Jae-Hong

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Transparent Electronics

3. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

4. Transparent oxide optoelectronics

5. Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

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1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10

2. Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model;physica status solidi (a);2024-03-06

3. Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving;IEEE Electron Device Letters;2023-11

4. Research Progress of Vertical Channel Thin Film Transistor Device;Sensors;2023-07-23

5. Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors;Journal of Materials Chemistry C;2022

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