Millimeter Wave MMIC Low Noise Amplifiers Using a 0.15 um Commercial pHEMT Process-Reference-Cited by-同舟云学术

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Millimeter Wave MMIC Low Noise Amplifiers Using a 0.15 um Commercial pHEMT Process

Published:2002-06-01 Issue:3 Volume:24 Page:190-196
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Jang Byung-Jun Jang,Yom In-Bok Yom,Lee Seong-Pal Lee

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

2. A new approach to FET model scaling and MMIC design based on electromagnetic analysis

3. A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology

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