Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model

Abstract

We present the mean-time-to-failure (MTTF) calculations for AlGaN/GaN high-electron-mobility transistors (HEMTs) using two independent acceleration factors. MTTF predictions are generally calculated through the Arrhenius relationship, based on channel temperature and acceleration, depend only on one parameter. Although the failure modes of the AlGaN/GaN HEMTs depend largely on the applied electric fields, the Eyring model is introduced to investigate both voltage and temperature dependent degradation of AlGaN/GaN devices. In anticipation of adequate MTTF values, studies were conducted on non-commercial devices. Further, we distinguished the cumulative failure percentages through the Weibull and log-normal distributions. We also explored the increase in gate leakage current at high temperatures for early device deterioration.