A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone-Reference-Cited by-同舟云学术

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A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

Published:1995-01-01 Issue:4 Volume:16 Page:1-11
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Lee Jong-Lam Lee,Kim, Haecheon Kim,,Mun Jae Kyung Mun,Kwon Ohseung Kwon,Lee Jae Jin Lee,Hwang In Duk Hwang,Park Hyung-Moo Park

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Highly efficient, very compact GaAs power module for cellular telephone

2. A UHF band 1.3 W monolithic amplifier with efficiency of 63%

3. 3 V operation L-band power double-doped heterojunction FETs

4. A 3.5V, 1.3W GaAs power multichip IC for cellular phone

5. Low voltage GaAs power amplifiers for personal communications at 1.9 GHz

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