A 3.5V, 1.3W GaAs power multichip IC for cellular phone
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx2/3147/8957/00394501.pdf?arnumber=394501
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications;The Open Materials Science Journal;2016-06-15
2. Off-state breakdown characteristics of InGaP-based high-barrier gate heterostructure field-effect transistors;Superlattices and Microstructures;2001-11
3. A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistor;Thin Solid Films;1996-12
4. A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications;IEEE Transactions on Electron Devices;1996-04
5. High-low doped power MESFET with 32.0 dBm output power for 3.0 V digital/analogue dual-mode hand-held telephones;Electronics Letters;1995-08-03
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