Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications-Reference-Cited by-同舟云学术

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Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

Published:2004-10-13 Issue:5 Volume:26 Page:475-480
ISSN:1225-6463
Container-title:ETRI Journal
language:en
Short-container-title:ETRI J

Author:

Kim Jin Soo,Lee Jin Hong,Hong Sung Ui,Kwack Ho-Sang,Lee Chul Wook,Oh Dae Kon

Publisher

Wiley

Subject

Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

2. Gain and the threshold of three-dimensional quantum-box lasers

3. High-performance InAs quantum-dot lasers near 1.3 μm

4. InAs quantum-dot lasers operating near 1.3 [micro sign]m with high characteristic temperature for continuous-wave operation

5. InAs self‐assembled quantum dots on InP by molecular beam epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrostatic pressure and magnetic field effects on donor states in pyramidal quantum dots;Superlattices and Microstructures;2014-11

2. Comparative experiments of graphene covalently and physically binding CdSe quantum dots to enhance the electron transport in flexible photovoltaic devices;Nanoscale;2014

3. Effect of aspect ratio on energy of optical transitions in a pyramid-shaped quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2013-06

4. Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency;Journal of Crystal Growth;2010-07

5. Near-field scanning optical microscopy of quantum dot broad area laser diodes;Journal of Materials Science: Materials in Electronics;2007-03-30

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