Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. A narrow photoluminescence linewidth of 21meV at 1.35μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates;Nishi;Appl. Phys. Lett.,1999
2. Self-assembled InAs quantum dots on patterned GaAs(001) substrates: formation and shape evolution;Kiravittaya;Appl. Phys. Lett.,2005
3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3μm;Ustinov;Appl. Phys. Lett.,1999
4. Comparison of InAs quantum dots grown on GaInAsP and InP;Barik;Nanotechnology,2006
5. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates;Saito;Appl. Phys. Lett.,2001
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1. Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition;CrystEngComm;2013
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