STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al<SUB>0.35</SUB> Ga<SUB>0.65</SUB> As TWO-DIMENSIONAL ELECTRON GAS-Reference-Cited by-同舟云学术

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STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al_0.35 Ga_0.65 As TWO-DIMENSIONAL ELECTRON GAS

Published:2010-05-06 Issue:2 Volume:29 Page:87-90
ISSN:1001-9014
Container-title:JOURNAL OF INFRARED AND MILLIMETER WAVES
language:en
Short-container-title:Journal of Infrared and Millimeter Waves

Author:

YANG Wei,LUO Hai-Hui,QIAN Xuan,JI Yang

Publisher

China Science Publishing & Media Ltd.

Subject

Atomic and Molecular Physics, and Optics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dark current simulation and verification of In-0.83 Ga-0.17 As detector with superlattice electron barrier;J INFRARED MILLIM W;2016

2. Effects of continuously graded or step-graded In Al1−As buffer on the performance of InP-based In0.83Ga0.17As photodetectors;Journal of Crystal Growth;2015-09

3. Impact of SiNx passivation on the surface properties of InGaAs photo-detectors;Journal of Applied Physics;2015-07-21

4. High indium content InGaAs photodetector: with InGaAs or InAlAs graded buffer layers;JOURNAL OF INFRARED AND MILLIMETER WAVES;2012-03-20

5. Analysis and evaluation of uniformity of SWIR InGaAs FPA—Part I: Material issues;Infrared Physics & Technology;2011-11

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